Stat,e-of-the-art low loss, high isolation SP6T switch for handset applications

In this paper, the design and measurement of a low cost high performance SPLT gallium-arsenide switch are discussed. The design uses a novel approach to reduce receive path loss and to achieve >40dB TX-RX isolation. It is implemented with the Filtronic Compound Semiconductors 0.5um D-mode GaAs pHEMT process. The switch can be configured to connect different GSM / GPRS / EDGE 850 / 900 / 1800 / 1900 MHz transceivers to a common antenna and can be used in all systems requiring high power at control voltages down to 2.5V. The MMIC measures only 1.1 mm². Transmit loss is less than 0.6 dB at 2 GHz, receive loss is less than 1 dB.