• DocumentCode
    427261
  • Title

    A SiGe HBT variable gain amplifier with 80 dB control range for applications up to 3 GHz

  • Author

    Byrne, N. ; Murphy, P.J. ; McCarthy, K.G. ; Foley, B.

  • fYear
    2004
  • fDate
    11-12 Oct. 2004
  • Firstpage
    193
  • Lastpage
    196
  • Abstract
    A variable eain amplifier suitable for wideband applications (up to 3GHz) has been designed and fabricated in a SiGe BiCMOS process with fT = 49 GHz. Variable gain is achieved with a current steering diflerential cascode cell. The amplifier has B linear-io-dB gain range of 82 dB at 1.85 G H a~nd 65 dB at 2.5 GHZw, hich is the largest control ranee reoorted to date. The amolifrer has a maximum gain of 18.\n\n\t\t
  • Keywords
    Attenuators; Broadband amplifiers; Electric variables control; Gain; Germanium silicon alloys; Heterojunction bipolar transistors; Radio frequency; Radiofrequency amplifiers; Silicon germanium; Topology;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Wireless Technology, 2004. 7th European Conference on
  • Conference_Location
    Amsterdam, The Netherlands
  • Print_ISBN
    1-58053-991-2
  • Type

    conf

  • Filename
    1394803
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=427261