Title :
On the modelling of electrons in thermo-electronic modelling of Si MOSFETs
Author :
Fushinobu, Kamyoshi ; Hatakeyama, Tomoyuki ; Okazaki, Ken
Author_Institution :
Tokyo Inst. of Technol., Japan
Abstract :
Importance of the modeling of electrons in coupled electro-thermal analysis of Si MOSFETs is discussed. The simple, lumped-electron temperature model predicts drastic increase of the electron temperature above the electric field of the order of 106V/m. Also, the calculation of electron thermal conductivity predicts that the thermal conductivity reaches on the order of 10-1 W/m-K. Numerical calculation of coupled electrical and thermal analysis predicts 103 K order of temperature gradient in the channel region. These results clearly exhibit the importance of the modeling of electrons in the coupled analysis.
Keywords :
MOSFET; elemental semiconductors; integrated circuit modelling; silicon; thermal analysis; thermal conductivity; Si; Si MOSFET; coupled electro-thermal analysis; electron thermal conductivity; electrons modelling; lumped-electron temperature model; thermo-electronic modelling; Charge carrier processes; Coupled mode analysis; Electron mobility; Electronic packaging thermal management; Lattices; MOSFETs; Semiconductor devices; Solid modeling; Temperature; Thermal conductivity;
Conference_Titel :
Electronics Packaging Technology Conference, 2004. EPTC 2004. Proceedings of 6th
Print_ISBN :
0-7803-8821-6
DOI :
10.1109/EPTC.2004.1396615
