On the modelling of electrons in thermo-electronic modelling of Si MOSFETs

Author

Fushinobu, Kamyoshi ; Hatakeyama, Tomoyuki ; Okazaki, Ken

Author_Institution

Tokyo Inst. of Technol., Japan

fYear

2004

fDate

8-10 Dec. 2004

Firstpage

259

Lastpage

263

Abstract

Importance of the modeling of electrons in coupled electro-thermal analysis of Si MOSFETs is discussed. The simple, lumped-electron temperature model predicts drastic increase of the electron temperature above the electric field of the order of 10⁶V/m. Also, the calculation of electron thermal conductivity predicts that the thermal conductivity reaches on the order of 10^-1 W/m-K. Numerical calculation of coupled electrical and thermal analysis predicts 10³ K order of temperature gradient in the channel region. These results clearly exhibit the importance of the modeling of electrons in the coupled analysis.

Keywords

MOSFET; elemental semiconductors; integrated circuit modelling; silicon; thermal analysis; thermal conductivity; Si; Si MOSFET; coupled electro-thermal analysis; electron thermal conductivity; electrons modelling; lumped-electron temperature model; thermo-electronic modelling; Charge carrier processes; Coupled mode analysis; Electron mobility; Electronic packaging thermal management; Lattices; MOSFETs; Semiconductor devices; Solid modeling; Temperature; Thermal conductivity;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronics Packaging Technology Conference, 2004. EPTC 2004. Proceedings of 6th

Print_ISBN

0-7803-8821-6

Type

conf

DOI

10.1109/EPTC.2004.1396615

Filename

1396615