DocumentCode :
428
Title :
Broadband Complementary Metal-Oxide Semiconductor Interconnection Transmission Line Measurements With Generalized Probe Transition Characterization and Verification of Multiline Thru-Reflect-Line Calibration
Author :
Chien-Chang Huang
Author_Institution :
Dept. of Commun. Eng., Yuan Ze Univ., Taoyuan, Taiwan
Volume :
3
Issue :
9
fYear :
2013
fDate :
Sept. 2013
Firstpage :
1564
Lastpage :
1569
Abstract :
This paper presents extraction techniques and measurement results for broadband complementary metal-oxide semiconductor (CMOS) interconnection transmission line (TL) measurements with generalized probe transition characterization and verification of multiline thru-reflect-line (TRL) calibration. Initially, the probe transition is represented by a transmission matrix instead of the conventional shunt/series model, with detailed parameter evaluation procedures using measured data from two lines that are twice in length. Subsequently, an additional long TL that fully exhibits the TL characteristics at low frequencies is characterized, whereas the matrix manipulations with the other two TL measured data are adapted for high-frequency regions to avoid the ill-conditioned problem. Consequently, broadband characterization for CMOS TL is achieved in a cost-effective manner. With an additional reflect test structure, the multiline TRL calibration can be performed as well for verification. The proposed method is examined by thin-film microstrip lines using CMOS 90-nm one-poly/nine-metal technology with measurement frequencies from 2 to 110 GHz.
Keywords :
CMOS integrated circuits; calibration; integrated circuit interconnections; microstrip lines; thin films; transmission lines; CMOS interconnection transmission line; TRL calibration; broadband complementary metal-oxide semiconductor interconnection transmission line measurements; generalized probe transition characterization; generalized probe transition verification; multiline thru-reflect-line calibration; thin film microstrip lines; CMOS integrated circuits; Calibration; Frequency measurement; Probes; Semiconductor device measurement; Transmission line matrix methods; Transmission line measurements; Calibration; interconnections; scattering parameters measurement; transmission lines;
fLanguage :
English
Journal_Title :
Components, Packaging and Manufacturing Technology, IEEE Transactions on
Publisher :
ieee
ISSN :
2156-3950
Type :
jour
DOI :
10.1109/TCPMT.2012.2228897
Filename :
6403885
Link To Document :
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