DocumentCode
428921
Title
TeraHertz Gunn amplification in semiconductor carbon nanotubes
Author
Dragoman, M. ; Dragoman, D.
Author_Institution
National Inst. for R&D in Microtechnology, Bucharest, Romania
Volume
1
fYear
2004
fDate
4-6 Oct. 2004
Lastpage
88
Abstract
A semiconductor carbon nanotube array biased with a dc electric field shows considerable gain at terahertz frequencies due to the Gunn effect. Important applications of this device are envisaged in the area of far-infrared spectroscopy and THz imaging.
Keywords
Gunn devices; Gunn effect; arrays; carbon nanotubes; nanotube devices; Gunn effect; THz imaging; carbon nanotube array; dc electric field; far-infrared spectroscopy; gain; semiconductor carbon nanotubes; terahertz Gunn amplification; terahertz frequency; Carbon nanotubes; Electron mobility; Free electron lasers; Frequency; Gunn devices; Optical amplifiers; Power generation; Quantum cascade lasers; Semiconductivity; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Conference, 2004. CAS 2004 Proceedings. 2004 International
Print_ISBN
0-7803-8499-7
Type
conf
DOI
10.1109/SMICND.2004.1402810
Filename
1402810
Link To Document