Title :
X-ray structural characteristics of nc-Si obtained by thermal annealing of a-Si and SiOx layers
Author :
Kleps, I. ; Danila, M. ; Angelescu, A. ; Miu, Marius ; Simion, M. ; Bragaru, A. ; Ignat, T.
Author_Institution :
National Inst. for R&D in Microtechnologies, Bucharest, Romania
Abstract :
Structural characteristics of nc-Si obtained by thermal annealing of a-Si and SiOx layers are investigated by X-ray diffraction method. Standard silicon technology processes were used in order to obtain Si nanocrystallites embedded in a-Si or in SiO2 layer. The nanocrystallite formation process was enhanced by the stress occurred in silicon oxides sandwich or in porous silicon structures.
Keywords :
X-ray diffraction; elemental semiconductors; nanostructured materials; semiconductor technology; silicon compounds; Si nanocrystallites; SiO2; SiOx layers; X-ray diffraction; X-ray structural characteristics; a-Si; nanocrystallite formation; nc-Si; porous silicon structures; silicon oxides sandwich; standard silicon technology; stress; thermal annealing; Annealing; Atmosphere; Industrial electronics; Laser ablation; Nanobioscience; Nanoparticles; Oxidation; Silicon; Substrates; Thermal stresses;
Conference_Titel :
Semiconductor Conference, 2004. CAS 2004 Proceedings. 2004 International
Print_ISBN :
0-7803-8499-7
DOI :
10.1109/SMICND.2004.1402811
