DocumentCode :
428938
Title :
The effect of lateral guiding mechanism on noise characteristics in semiconductor lasers
Author :
Zarefkar, A. ; Falahatpisheh, Afsaneh
Author_Institution :
Dept. of Electr. Eng., Saveh Azad Univ., Iran
Volume :
1
fYear :
2004
fDate :
4-6 Oct. 2004
Lastpage :
206
Abstract :
A comparison between intensity and frequency noise spectra and also the line shapes of gain-guided, weakly-index-guided, and strongly-index-guided semiconductor lasers are made using numerical solution of the field and carrier density rate equations including spontaneous emission noise.
Keywords :
partial differential equations; semiconductor device noise; semiconductor lasers; spontaneous emission; carrier density rate equations; field density rate equations; frequency noise spectra; gain-guided semiconductor lasers; intensity noise spectra; lateral guiding mechanism; line shapes; noise characteristics; numerical simulation; numerical solution; spontaneous emission noise; strongly-index-guided semiconductor lasers; weakly-index-guided semiconductor lasers; Charge carrier density; Differential equations; Laser modes; Laser noise; Multi-stage noise shaping; Optical noise; Semiconductor device noise; Semiconductor lasers; Steady-state; Switches;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Conference, 2004. CAS 2004 Proceedings. 2004 International
Print_ISBN :
0-7803-8499-7
Type :
conf
DOI :
10.1109/SMICND.2004.1402840
Filename :
1402840
Link To Document :
بازگشت