DocumentCode
428939
Title
Theoretical and experimental study of the effect of carrier relaxation on threshold and power-current characteristics of quantum well lasers
Author
Zegrya, G.G. ; Bazhenov, N.L. ; Dorofeyev, D.V. ; Evtikhiev, V.P. ; Kotelnikov, E.Yu. ; Mynbaev, K.D. ; Solovyev, I.Yu. ; Shkolnik, A.S.
Author_Institution
Ioffe Physico-Tech. Inst., St.Petersburg, Russia
Volume
1
fYear
2004
fDate
4-6 Oct. 2004
Lastpage
212
Abstract
In this paper, the effect of intraband relaxation processes of non-equilibrium carriers on the threshold and power-current characteristics of quantum-well lasers is studied both theoretically and experimentally. Special attention is paid to the study of physical mechanisms, which affect the maximum laser power. It is shown that at high excitation levels, the maximum laser power gets affected, apart from lattice and carrier heating, by the phenomenon of gain saturation. Power-current characteristics of a quantum well laser are calculated with gain saturation effect being taken into account. It is shown that at high excitation levels the characteristic becomes non-linear. Calculated behavior of power-current characteristics agrees well with experimental observations.
Keywords
carrier density; quantum well lasers; carrier heating; carrier relaxation; excitation levels; experimental study; gain saturation; intraband relaxation; lattice heating; maximum laser power; non-equilibrium carriers; physical mechanisms; power-current characteristics; quantum well lasers; theoretical study; threshold characteristics; Electromagnetic wave absorption; Electrons; Laser theory; Optical device fabrication; Photonic band gap; Power lasers; Quantum mechanics; Quantum well lasers; Semiconductor lasers; Temperature dependence;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Conference, 2004. CAS 2004 Proceedings. 2004 International
Print_ISBN
0-7803-8499-7
Type
conf
DOI
10.1109/SMICND.2004.1402843
Filename
1402843
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