Optical and electrical properties of the CdS/InP heterostructures solar cells

Author

Slobodchikov, S.V. ; Rusu, E. ; Arabadji, P. ; Purica, M. ; Budianu, E.

Author_Institution

Inst. of Appl. Phys., Chisinau, Moldova

Volume

1

fYear

2004

fDate

4-6 Oct. 2004

Lastpage

224

Abstract

Technological procedures of solar cells fabrication based on n⁺-CdS/p-p⁺-InP heterostructures are presented. The conversion efficiency under AM 1.5 illumination condition of the obtained solar cell was ∼12.6% at I_SC = 16mA/cm², U_OC = (0.74-0.78) V. The charge transport mechanism in solar cells in the temperature range of (100-300) K has been investigated, it has been established that direct current is determined either by charge carrier tunneling through local centres (low temperature) or by recombination processes in the charge depleted region. The heterojunction breakdown mechanism is determined by charge carrier tunneling processes.

Keywords

II-VI semiconductors; III-V semiconductors; cadmium compounds; electrical conductivity; indium compounds; solar cells; tunnelling; 0.74 to 0.78 V; 100 to 300 K; AM illumination; CdS; CdS-InP heterostructures; InP; charge carrier tunneling; charge depleted region; charge transport mechanism; conversion efficiency; direct current; electrical properties; heterojunction breakdown mechanism; n⁺-CdS-p-p⁺-InP; optical properties; recombination process; solar cell fabrication; Crystalline materials; Doping; Hydrogen; Indium phosphide; Inductors; Lattices; Photovoltaic cells; Substrates; Surface resistance; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference, 2004. CAS 2004 Proceedings. 2004 International

Print_ISBN

0-7803-8499-7

Type

conf

DOI

10.1109/SMICND.2004.1402846

Filename

1402846