Title :
Optical and electrical properties of the CdS/InP heterostructures solar cells
Author :
Slobodchikov, S.V. ; Rusu, E. ; Arabadji, P. ; Purica, M. ; Budianu, E.
Author_Institution :
Inst. of Appl. Phys., Chisinau, Moldova
Abstract :
Technological procedures of solar cells fabrication based on n+-CdS/p-p+-InP heterostructures are presented. The conversion efficiency under AM 1.5 illumination condition of the obtained solar cell was ∼12.6% at ISC = 16mA/cm2, UOC = (0.74-0.78) V. The charge transport mechanism in solar cells in the temperature range of (100-300) K has been investigated, it has been established that direct current is determined either by charge carrier tunneling through local centres (low temperature) or by recombination processes in the charge depleted region. The heterojunction breakdown mechanism is determined by charge carrier tunneling processes.
Keywords :
II-VI semiconductors; III-V semiconductors; cadmium compounds; electrical conductivity; indium compounds; solar cells; tunnelling; 0.74 to 0.78 V; 100 to 300 K; AM illumination; CdS; CdS-InP heterostructures; InP; charge carrier tunneling; charge depleted region; charge transport mechanism; conversion efficiency; direct current; electrical properties; heterojunction breakdown mechanism; n+-CdS-p-p+-InP; optical properties; recombination process; solar cell fabrication; Crystalline materials; Doping; Hydrogen; Indium phosphide; Inductors; Lattices; Photovoltaic cells; Substrates; Surface resistance; Temperature;
Conference_Titel :
Semiconductor Conference, 2004. CAS 2004 Proceedings. 2004 International
Print_ISBN :
0-7803-8499-7
DOI :
10.1109/SMICND.2004.1402846
