DocumentCode :
428942
Title :
Surface texturization of monocrystaline silicon by wet chemical etching for high efficiency silicon solar cells
Author :
Manea, E. ; Budianu, E. ; Purica, M. ; Babarada, F. ; Cernica, I. ; Moagar-Poladian, V.
Author_Institution :
Nat. Inst. for R&D in Microtechnologies, Bucharest, Romania
Volume :
1
fYear :
2004
fDate :
4-6 Oct. 2004
Lastpage :
228
Abstract :
This paper presents the results of an experimental study regarding the increase of the silicon solar cells efficiency by texturing the front surface. Designing, patterning and surface etching processes led to refined structures with very low losses of the incident optical radiation. Photolithography has been used to generate patterns (disc hole) through the silicon dioxide layer grown at the beginning on silicon wafers. The holes (4μm in diameter) have been uniformly distributed on the entire surface (1×l) cm and the distance between the hole centers was determined to be 20μm. Semispherical walls have been defined in holes by isotropic etching up to join together of the wells.
Keywords :
etching; photolithography; silicon compounds; solar cells; surface texture; 20 micron; 4 micron; SiO2; disc hole; incident optical radiation; isotropic etching; light trapping; monocrystaline silicon; pattern generation; photolithography; semispherical walls; silicon dioxide layer; silicon solar cells; silicon wafer; surface etching; surface texturization; wells; wet chemical etching; Chemicals; Fabrication; Geometry; Photovoltaic cells; Photovoltaic systems; Scanning electron microscopy; Silicon; Solar power generation; Surface texture; Wet etching;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Conference, 2004. CAS 2004 Proceedings. 2004 International
Print_ISBN :
0-7803-8499-7
Type :
conf
DOI :
10.1109/SMICND.2004.1402847
Filename :
1402847
Link To Document :
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