Polarization-Engineered III-Nitride Heterojunction Tunnel Field-Effect Transistors

Author

Li, Wenjun ; Sharmin, Saima ; Ilatikhameneh, Hesameddin ; Rahman, Rajib ; Lu, Yeqing ; Wang, Jingshan ; Yan, Xiaodong ; Seabaugh, Alan ; Klimeck, Gerhard ; Jena, Debdeep ; Fay, Patrick

Author_Institution

Department of Electrical Engineering, University of Notre Dame, Notre Dame, IN, USA

Volume

1

fYear

2015

fDate

Dec. 2015

Firstpage

28

Lastpage

34

Abstract

The concept and simulated device characteristics of tunneling field-effect transistors (TFETs) based on III-nitride heterojunctions are presented for the first time. Through polarization engineering, interband tunneling can become significant in III-nitride heterojunctions, leading to the potential for a viable TFET technology. Two prototype device designs, inline and sidewall-gated TFETs, are discussed. Polarization-assisted p-type doping is used in the source region to mitigate the effect of the deep Mg acceptor level in p-type GaN. Simulations indicate that TFETs based on III-nitride heterojunctions can be expected to achieve ON/ OFF ratios of $10^{6}$ or more, with switching slopes well below 60 mV/decade, ON-current densities approaching 100 $\\mu text{A}/\\mu text{m}$ , and energy delay products as low as 67 aJ-ps/ $\\mu text{m}$ .

Keywords

Computational modeling; Doping; Gallium nitride; Heterojunctions; Logic gates; Photonic band gap; Tunneling; III-nitride heterojunction; InN; polarization engineering; tunnel field-effect transistors (TFETs);

fLanguage

English

Journal_Title

Exploratory Solid-State Computational Devices and Circuits, IEEE Journal on

Publisher

ieee

ISSN

2329-9231

Type

jour

DOI

10.1109/JXCDC.2015.2426433

Filename

7094229