DocumentCode :
430232
Title :
Early assessment of leakage power for system level design
Author :
Talarico, C. ; Pillilli, B. ; Vakati, K.L. ; Wang, J.M.
Author_Institution :
Dept. of Electr. & Comput. Eng., Arizona Univ., Tucson, AZ, USA
fYear :
2005
fDate :
21-23 March 2005
Firstpage :
133
Lastpage :
136
Abstract :
This paper presents a system level methodology for analyzing leakage power in the early stages of a system design. The assessment of leakage takes into account the simultaneous effect of threshold-voltage (Vt), oxide thickness (tox), device width (W), the inputs applied and statistical process variations. The approach has been validated by applying it to the design of a digital signal processing system. The results indicate that our power estimation technique is within 10% of SPICE, with the benefit of executing 15× faster.
Keywords :
CMOS integrated circuits; digital signal processing chips; integrated circuit design; leakage currents; power consumption; device width; digital signal processing system; leakage power; oxide thickness; power estimation; statistical process variations; system level design; threshold voltage; Design engineering; Energy consumption; Equations; Integrated circuit technology; Polynomials; Power engineering and energy; Power engineering computing; Signal design; Stochastic processes; System-level design;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Quality of Electronic Design, 2005. ISQED 2005. Sixth International Symposium on
Print_ISBN :
0-7695-2301-3
Type :
conf
DOI :
10.1109/ISQED.2005.50
Filename :
1410571
Link To Document :
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