DocumentCode :
430286
Title :
LDMOS RF power amplifiers with improved IMD performance
Author :
Budimir, D. ; Koulouzis, H. ; Williams, C.
Volume :
3
fYear :
2004
fDate :
12-14 Oct. 2004
Firstpage :
1185
Lastpage :
1188
Abstract :
An LDMOS RF power amplifier for RF multichannel wireless systems with improved performance characteristics such as intermodulation distortion (IMD) is presented. The injeclion of the fundamental signal second harmonics in the amplifier together with the two fundamental signals will produce additional IM products at the output. By proper selection of phase and amplitude of the injected second harmonic signals, it is possible to make the third order IM products produced by the second harmonics and the original third order IM products out of phase and equal in amplitude.
Keywords :
Communication channels; Gallium arsenide; Intermodulation distortion; Linearity; MESFETs; Power amplifiers; Power harmonic filters; Quadrature phase shift keying; Radio frequency; Radiofrequency amplifiers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Conference, 2004. 34th European
Conference_Location :
Amsterdam, The Netherlands
Print_ISBN :
1-58053-992-0
Type :
conf
Filename :
1411217
Link To Document :
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