DocumentCode
430397
Title
Simulation of the temperature injection PHEMT
Author
Di, Song ; Chang-Zhi, Li ; Xiao-Dan, Cai
Author_Institution
Sch. of Electr. Inf. & Autom., Beijing Univ. of Technol., China
fYear
2004
fDate
18-21 Aug. 2004
Firstpage
531
Lastpage
535
Abstract
A new microwave device model is brought out and simulated, which is called TI-PHEMT. The maximum extrinsic transconductance at high temperature increases significantly and therefore the microwave performance of HEMT at high temperature is increased. A new concept "temperature injection" is put forward to explain the reason.
Keywords
III-V semiconductors; gallium arsenide; high-temperature electronics; microwave devices; power HEMT; semiconductor device models; GaAs; TI-PHEMT; high temperature characteristic; maximum extrinsic transconductance; microwave device model; microwave performance; temperature injection; Doping; Gallium arsenide; HEMTs; Indium gallium arsenide; Microwave devices; PHEMTs; Semiconductor process modeling; Size control; Temperature; Transconductance;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave and Millimeter Wave Technology, 2004. ICMMT 4th International Conference on, Proceedings
Print_ISBN
0-7803-8401-6
Type
conf
DOI
10.1109/ICMMT.2004.1411584
Filename
1411584
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