Title :
A 200 MHz-2250 MHz / 400 MHz-4500 MHz regenerative frequency doubler in a 0.35μm SiGe process
Author :
Ye, S. ; Lu, Y. ; Jin, H. ; Peng, S. ; Chatterjee, A. ; Ma, S. ; Gupta, A. ; Wroblewski, M. ; Ren, J.
Author_Institution :
Terasic Technol. Inc., Kaohsiung, Taiwan
Abstract :
A wideband frequency doubler used in a satellite modulator for DVB-RCS (DVB return channel via satellite) applications is presented. The doubler is based on a regeneration configuration and fabricated in a 0.35μm SiGe process. The doubler exhibits large output signal swing and very low phase noise degradation with an output bandwidth of 4.1GHz.
Keywords :
Ge-Si alloys; elemental semiconductors; frequency multipliers; 0.35 micron; 200 to 2250 MHz; 4.1 GHz; 400 to 4500 MHz; DVB return channel via satellite; SiGe; SiGe process; regenerative frequency doubler; satellite modulator; wideband frequency doubler; Bandwidth; Digital video broadcasting; Frequency conversion; Germanium silicon alloys; RF signals; Radio frequency; Satellite broadcasting; Silicon germanium; Voltage-controlled oscillators; Wideband;
Conference_Titel :
Microwave and Millimeter Wave Technology, 2004. ICMMT 4th International Conference on, Proceedings
Print_ISBN :
0-7803-8401-6
DOI :
10.1109/ICMMT.2004.1411595
