Title :
High-performance edge-suspended spiral inductors and CPWs on CMOS-grade silicon substrates
Author :
Zhang, Jinwen ; Hon, Wai Cheong ; Leung, Lydia L W ; Chen, K.J.
Author_Institution :
Dept. of Electr. & Electron. Eng., Hong Kong Univ. of Sci. & Technol., Kowloon, China
Abstract :
This paper reports high performance edge-suspended passive components realized by CMOS-compatible micromachining. The operation principle is described in detail. Edge-suspended inductors (ESIs) and CPWs (ESCPWs) are fabricated using a combination of deep dry etching and anisotropic wet etching techniques. For a three-turn 4.5-nH inductor, a 70% increase (from 6.8 to 11.7) in maximum Q-factor and a 57% increase (from 9.1 GHz to 14.3 GHz) in self-resonance frequency are obtained with a 11 μm suspended edge in 25 μm wide lines. A 50 Ω CPW exhibits a reduction in insertion loss, from 2.4dB/mm to 0.4dB/mm at 39 GHz.
Keywords :
coplanar waveguides; etching; inductors; micromachining; silicon; substrates; 11 micron; 14.3 GHz; 25 micron; 39 GHz; 50 ohm; 9.1 GHz; CMOS-compatible micromachining; CMOS-grade silicon substrates; anisotropic wet etching; coplanar waveguide; current crowding; deep dry etching; edge-suspended CPW; edge-suspended passive components; edge-suspended spiral inductors; insertion loss reduction; maximum Q-factor; proximity effect; self-resonance frequency; Anisotropic magnetoresistance; Coplanar waveguides; Dry etching; Frequency; Inductors; Micromachining; Q factor; Silicon; Spirals; Wet etching;
Conference_Titel :
Microwave and Millimeter Wave Technology, 2004. ICMMT 4th International Conference on, Proceedings
Print_ISBN :
0-7803-8401-6
DOI :
10.1109/ICMMT.2004.1411597
