1D hydrodynamic transient simulation of a ballistic diode comprising the lattice heat flow equation

Author

Liu, Ye ; Zhou, Huaian ; Wang, Qiang ; Du, Zhengwei

Author_Institution

Dept. of Electr. Eng., Tsinghua Univ., Beijing, China

fYear

2004

fDate

18-21 Aug. 2004

Firstpage

769

Lastpage

772

Abstract

A one-dimensional device simulation program based on the hydrodynamic model plus lattice heat flow equation is developed for the simulation and analysis of submicrometer devices. The program can handle both steady-state and transient-state simulations. In transient simulation, the coupling relations among equations are investigated and combined into the numerical algorithms. Both steady-state and transient simulations are carried out on a ballistic diode. Results show hot carrier effects in the device and the influence of lattice heat flow equation on the whole model clearly.

Keywords

circuit simulation; hot carriers; semiconductor device models; semiconductor diodes; transient analysis; 1D hydrodynamic transient simulation; ballistic diode; device simulation; hot carrier; lattice heat flow equation; numerical algorithms; steady-state simulation; submicrometer devices; transient-state simulations; Analytical models; Charge carrier processes; Diodes; Hydrodynamics; Lattices; Poisson equations; Resistance heating; Temperature; Thermal conductivity; Transient analysis;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Millimeter Wave Technology, 2004. ICMMT 4th International Conference on, Proceedings

Print_ISBN

0-7803-8401-6

Type

conf

DOI

10.1109/ICMMT.2004.1411643

Filename

1411643