The integrated 2W high voltage/high power 0. 12-/spl mu/m RF CMOS power amplifier

A 2W HiW power amplifier for GSM mobile communication system is designed using 0.12-μm CMOS process. To solve the problem of low breakdown voltage in deep-submicron CMOS technology, the new High Voltage/Wigh Power (HivP) device configuration is used. With HiVP configuration, a large voltage can be divided by several devices, so that the voltage drop on each device is reduced. Hence the low-cost CMOS technology can be adopted for the design of power amplifier which will he used in a mobile phone. In this paper, an analytical overview of theory and practice of the HiVP power amplifier are discussed.