DocumentCode :
430512
Title :
An ultra wideband 5 W power amplifier using SiC MESFETs
Author :
Sayed, A. ; von der Mark, S. ; Boeck, G.
Volume :
1
fYear :
2004
fDate :
12-14 Oct. 2004
Firstpage :
57
Lastpage :
60
Abstract :
A 5 watt widehand power amplifier using a Sic MESFET has been designed. The frequency range covers 10 MHz to 2.4 CHz with small-signal gain of 8 dB.A broadband choke structure with a new technique was developed to obtain good isolation and low loss over the desired bandwidth. Input and output matching networks and shunt feedback topology were introduced to increase the bandwidth. At VDS = 30 V and IDS = 500 mA, power performance measurements with PAE of almost 3% an output power of 231 dBm and 8 dB power gain over the operating bandwidth were achieved. livo-tone measurements at frequency spacing of200 kHz were also done and OIPZ and OlP3 of 16 dBm and 49 dBm, respectively, were obtained. Finally, AMAM and AMlPM distortions were measured and the results are discussed.
Keywords :
Bandwidth; Broadband amplifiers; Distortion measurement; Frequency; Inductors; MESFETs; Power amplifiers; Power generation; Silicon carbide; Ultra wideband technology;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Conference, 2004. 34th European
Conference_Location :
Amsterdam, The Netherlands
Print_ISBN :
1-58053-992-0
Type :
conf
Filename :
1412515
Link To Document :
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