DocumentCode
430516
Title
Dielectric material impact on capacitive RF MEMS reliability
Author
Lisec, T. ; Huth, C. ; Wagner, B.
Volume
1
fYear
2004
fDate
12-14 Oct. 2004
Firstpage
73
Lastpage
76
Abstract
The influence of different types of dielectrics on the switching behaviour and reliability of capacitive RF MEMS switches fabricated by metal surfacemicromachining is investigated. Sputtered AIN layers are compared to PECVD Si,N4 and TalOs layers. It has been found that switches with sputtered AIN can he operated without failure in a wide range of driving conditions. Besides the dielectric charging problem another degradation has heen observed independent of the dielectric material. The effect only occurs for operation in ambient air and is probably caused by an electrochemical reaction.
Keywords
Biomembranes; Degradation; Dielectric materials; Materials reliability; Micromechanical devices; Packaging; Radiofrequency microelectromechanical systems; Switches; Temperature; Wafer scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 2004. 34th European
Conference_Location
Amsterdam, The Netherlands
Print_ISBN
1-58053-992-0
Type
conf
Filename
1412519
Link To Document