DocumentCode :
430516
Title :
Dielectric material impact on capacitive RF MEMS reliability
Author :
Lisec, T. ; Huth, C. ; Wagner, B.
Volume :
1
fYear :
2004
fDate :
12-14 Oct. 2004
Firstpage :
73
Lastpage :
76
Abstract :
The influence of different types of dielectrics on the switching behaviour and reliability of capacitive RF MEMS switches fabricated by metal surfacemicromachining is investigated. Sputtered AIN layers are compared to PECVD Si,N4 and TalOs layers. It has been found that switches with sputtered AIN can he operated without failure in a wide range of driving conditions. Besides the dielectric charging problem another degradation has heen observed independent of the dielectric material. The effect only occurs for operation in ambient air and is probably caused by an electrochemical reaction.
Keywords :
Biomembranes; Degradation; Dielectric materials; Materials reliability; Micromechanical devices; Packaging; Radiofrequency microelectromechanical systems; Switches; Temperature; Wafer scale integration;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Conference, 2004. 34th European
Conference_Location :
Amsterdam, The Netherlands
Print_ISBN :
1-58053-992-0
Type :
conf
Filename :
1412519
Link To Document :
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