Ultra-wideband monolithic microwave integrated circuit solutions in SiGe and GaAs technology

Ultra-widehand analog monolithic microwave integrated circuits for advanced RF front-ends are presented using SiGe and GaAs technology. We demonstrate the design of analog MMlCs with excellent amplitude and phase linearity over an instantaneous bandwidth from DC to over 20GHz. The MMIC presented in the paper are frequency converters based on Gilbert cells, integrated active haluns, and active combiners. The mixer circuits exhibit lOdB conversion gain with a 3 dB bandwidth of -10 GHz at both the RF and the IF port. The integrated active halnns, combiners, and mixer using advanced GaAs processes exhibit an even larger bandwidth beyond 20GHz. The design technique allows for reduced complexity and modular architecture of RF front-ends. Critical components in modular design are identified and experimental and simulated results for frequency converters are presented demonstrating.