DocumentCode
430579
Title
Improvement in ACLR asymmetry for W-CDMA InGaP/GaAs HBT power amplifier
Author
Kimura, K. ; Seki, M. ; Matsumura, N. ; Honjo, K.
Volume
1
fYear
2004
fDate
12-14 Oct. 2004
Firstpage
333
Lastpage
336
Abstract
Asymmetry in Adjacent Channel Leakage power Ratio (ACLR) has been often observed in high power amplifiers for digital wireless communication systems such as W-CDMA. This paper describes a method for reducing the asymmetry by controlling bias circuit impedance at sub harmonics. By shortening both at 4MHz and 8MHz at the bias circuits, an 8.37-dB ACLR asymmetry could be su pressed to a 5.05-dB ACLR asymmetry, where a 10.5-dl3 3 order Inter Modulation Distortion (IMD3) asymmetry could also be successfully improved to a 1.8-dB IMD3 asymmetry.
Keywords
Circuits; Frequency; Gallium arsenide; Heterojunction bipolar transistors; High power amplifiers; Multiaccess communication; Power amplifiers; Power measurement; Resins; Transfer functions;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 2004. 34th European
Conference_Location
Amsterdam, The Netherlands
Print_ISBN
1-58053-992-0
Type
conf
Filename
1412589
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