Title :
A InGaP/GaAs HBT WLAN power amplifier with power detector
Author :
Kyung Ai Lee ; Dong Ho Lee ; Hyun-Min Park ; Sang-Hoon Cheon ; Jae-Woo Park ; Hyung-mo Yoo ; Songcheol Hong
Abstract :
A two-stage InCaPEaAs heterojunction bipolar transistor (HBT) power amplifier is developed for WLAN 802.11b application. This is integrated with power detector that senses input power of power stage in order to decrease ontput power loss of detecting. The power amplifier delivers up to 26dBm output power with the maximum power-added efficiency (PAE) of 31% including consumption of the power detector uuder the supply voltage of 3.3%´
Keywords :
Detectors; Electronic ballasts; Gallium arsenide; Heterojunction bipolar transistors; High power amplifiers; Power amplifiers; Power generation; Power transistors; Radiofrequency amplifiers; Wireless LAN;
Conference_Titel :
Microwave Conference, 2004. 34th European
Conference_Location :
Amsterdam, The Netherlands
Print_ISBN :
1-58053-992-0
