DocumentCode
43061
Title
A New Fin p-Body Insulated Gate Bipolar Transistor With Low Miller Capacitance
Author
Hao Feng ; Wentao Yang ; Onozawa, Yuichi ; Yoshimura, Takashi ; Tamenori, Akira ; Sin, Johnny K. O.
Author_Institution
Dept. of Electron. & Comput. Eng., Hong Kong Univ. of Sci. & Technol., Hong Kong, China
Volume
36
Issue
6
fYear
2015
fDate
Jun-15
Firstpage
591
Lastpage
593
Abstract
A new fin p-body insulated gate bipolar transistor (Fin-p IGBT) is designed and experimentally demonstrated. The device features wide trenches and spacer gates, which is implemented using a simple and low-cost process. Compared with the conventional floating p-body IGBT, the fabricated Fin-p IGBT is able to achieve remarkable reduction in both Miller capacitance (-60% at VCE of 15 V) and gate charge (-46%).
Keywords
insulated gate bipolar transistors; isolation technology; Fin p-body insulated gate bipolar transistor; Fin-p IGBT; low Miller capacitance; low cost process; voltage 15 V; wide spacer gate IGBT; wide trench IGBT; Capacitance; Insulated gate bipolar transistors; Logic gates; Noise; Semiconductor device measurement; Surface topography; Surface treatment; Fin p-body; Miller capacitance; gate charge; insulated gate bipolar transistor (IGBT); wide trench;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/LED.2015.2426197
Filename
7094237
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