DocumentCode
430687
Title
A 1 V 1.1 GHz CMOS integrated receiver front-end
Author
Cheng, Wang-Chi ; Chan, Cheong-Fat ; Pun, Kong-Pang ; Choy, Chiu-Sing
Author_Institution
Dept. of Electron. Eng., Hong Kong Chinese Univ.
Volume
1
fYear
2004
fDate
6-9 Dec. 2004
Firstpage
325
Abstract
This paper describes the design of a 1 V 1.1 GHz CMOS integrated receiver front-end. The receiver consists of a transconductance low noise amplifier (LNA) and a current mode down conversion mixer powered by a 1 V supply. The receiver was fabricated and measured using an AMSreg 0.35 mum CMOS technology. The total measured noise figure is equal to 11.77 dB and the input-referred third-order intercept point (IIP3) is equal to 2 dBm. Moreover, the overall power gain of the receiver is equal to 7 dB
Keywords
CMOS integrated circuits; mixers (circuits); operational amplifiers; radio receivers; 0.35 micron; 1 V; 1.1 GHz; 11.77 dB; 7 dB; CMOS integrated receiver front-end; LNA; current mode down conversion mixer; receiver fabrication; transconductance low noise amplifier; CMOS technology; Capacitors; Circuits; Inductors; Low-noise amplifiers; Noise figure; Radio frequency; Radiofrequency amplifiers; Transconductance; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems, 2004. Proceedings. The 2004 IEEE Asia-Pacific Conference on
Conference_Location
Tainan
Print_ISBN
0-7803-8660-4
Type
conf
DOI
10.1109/APCCAS.2004.1412760
Filename
1412760
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