DocumentCode
430814
Title
The analysis of the (100)surface of GaAs for NEA photocathode with XPS
Author
RongGuo Fua ; Chang, Benkang ; Gao, Ping
Author_Institution
Inst. of Electron. Eng. & Photoelectronic Technol., Nanjing Univ. of Sci. & Technol., China
fYear
2004
fDate
6-10 Sept. 2004
Firstpage
173
Lastpage
175
Abstract
This paper first introduces the characteristic of GaAs for the manufacture of evaluation system of negative electron affinity photocathode. Then the paper gives the surface clean technique of the GaAs. The spectral diagrams of the elements on the surface of the GaAs before and after the surface clean process are given. Through the comparing of the spectral diagrams a conclusion is obtained that the cleaning technique can eliminate the oxides on the surface of the GaAs. At last, the paper gives the spectral response curve of the NEA photocathode.
Keywords
electron affinity; gallium arsenide; photocathodes; surface cleaning; GaAs; XPS; negative electron affinity photocathode; oxide elimination; spectral diagrams; spectral response curve; surface clean technique; Cathodes; Electrons; Gallium arsenide; Heating; Semiconductor device manufacture; Semiconductor materials; Surface cleaning; Surface contamination; Surface finishing; Vacuum systems;
fLanguage
English
Publisher
ieee
Conference_Titel
Vacuum Electron Sources Conference, 2004. Proceedings. IVESC 2004. The 5th International
Print_ISBN
0-7803-8437-7
Type
conf
DOI
10.1109/IVESC.2004.1414180
Filename
1414180
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