Title :
The analysis of the (100)surface of GaAs for NEA photocathode with XPS
Author :
RongGuo Fua ; Chang, Benkang ; Gao, Ping
Author_Institution :
Inst. of Electron. Eng. & Photoelectronic Technol., Nanjing Univ. of Sci. & Technol., China
Abstract :
This paper first introduces the characteristic of GaAs for the manufacture of evaluation system of negative electron affinity photocathode. Then the paper gives the surface clean technique of the GaAs. The spectral diagrams of the elements on the surface of the GaAs before and after the surface clean process are given. Through the comparing of the spectral diagrams a conclusion is obtained that the cleaning technique can eliminate the oxides on the surface of the GaAs. At last, the paper gives the spectral response curve of the NEA photocathode.
Keywords :
electron affinity; gallium arsenide; photocathodes; surface cleaning; GaAs; XPS; negative electron affinity photocathode; oxide elimination; spectral diagrams; spectral response curve; surface clean technique; Cathodes; Electrons; Gallium arsenide; Heating; Semiconductor device manufacture; Semiconductor materials; Surface cleaning; Surface contamination; Surface finishing; Vacuum systems;
Conference_Titel :
Vacuum Electron Sources Conference, 2004. Proceedings. IVESC 2004. The 5th International
Print_ISBN :
0-7803-8437-7
DOI :
10.1109/IVESC.2004.1414180