• DocumentCode
    430814
  • Title

    The analysis of the (100)surface of GaAs for NEA photocathode with XPS

  • Author

    RongGuo Fua ; Chang, Benkang ; Gao, Ping

  • Author_Institution
    Inst. of Electron. Eng. & Photoelectronic Technol., Nanjing Univ. of Sci. & Technol., China
  • fYear
    2004
  • fDate
    6-10 Sept. 2004
  • Firstpage
    173
  • Lastpage
    175
  • Abstract
    This paper first introduces the characteristic of GaAs for the manufacture of evaluation system of negative electron affinity photocathode. Then the paper gives the surface clean technique of the GaAs. The spectral diagrams of the elements on the surface of the GaAs before and after the surface clean process are given. Through the comparing of the spectral diagrams a conclusion is obtained that the cleaning technique can eliminate the oxides on the surface of the GaAs. At last, the paper gives the spectral response curve of the NEA photocathode.
  • Keywords
    electron affinity; gallium arsenide; photocathodes; surface cleaning; GaAs; XPS; negative electron affinity photocathode; oxide elimination; spectral diagrams; spectral response curve; surface clean technique; Cathodes; Electrons; Gallium arsenide; Heating; Semiconductor device manufacture; Semiconductor materials; Surface cleaning; Surface contamination; Surface finishing; Vacuum systems;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Vacuum Electron Sources Conference, 2004. Proceedings. IVESC 2004. The 5th International
  • Print_ISBN
    0-7803-8437-7
  • Type

    conf

  • DOI
    10.1109/IVESC.2004.1414180
  • Filename
    1414180