Title :
Growth rate of a-Si:H film influenced by magnetic field gradient in MWECR CVD plasma system
Author :
Yuehui, Hu ; Guanghua, Chen ; Zhu Xiuhong ; Rong Yandong ; Gao Zhuo ; Li Ying ; Zhou Huaien
Author_Institution :
Dept. of Material Sci. & Eng., Beijing Univ. of Technol., China
Abstract :
In this paper, the magnetic field profiles, which were produced by three ways in the deposition chamber and plasma chamber of single coil divergent field microwave electronic circle resonance chemistry vapor deposition (MWECR CVD) system, was investigated. Then the magnetic field gradient of these magnetic field profiles was obtained quantitatively by using Lorentz fit. The results indicated that the gradient value of the magnetic field profile nearby the substrate, which was produced by a coil current with 137.7A if a SmCo permanent magnet was equipped below the substrate holder, is the largest, and the highest deposition rate of the hydrogenated amorphous silicon (a-Si:H) film was observed in this condition.
Keywords :
hydrogenation; magnetic field effects; magnetic fields; plasma CVD; silicon; thin films; 137.7 A; Lorentz fit; MWECR CVD plasma system; MWECR CVD system; Si-H; SmCo permanent magnet; a-Si:H film; chemistry vapor deposition; deposition chamber; growth rate; hydrogenated amorphous silicon; magnetic field gradient; magnetic field profile; microwave electronic circle resonance; plasma chamber; single coil divergent field; substrate holder; Amorphous silicon; Chemical vapor deposition; Coils; Magnetic fields; Magnetic films; Magnetic resonance; Permanent magnets; Plasma chemistry; Semiconductor films; Substrates;
Conference_Titel :
Vacuum Electron Sources Conference, 2004. Proceedings. IVESC 2004. The 5th International
Print_ISBN :
0-7803-8437-7
DOI :
10.1109/IVESC.2004.1414229
