• DocumentCode
    430827
  • Title

    Investigation of InP/InGaAs heterostructure confinement bipolar transistors grown by low-pressure MOCVD

  • Author

    Tsai, Jung-Hui ; Chu, Ying-Cheng ; Zhu, King-Poul ; Chiu, Shao-Yen

  • Author_Institution
    Dept. of Phys., National Kaohsiung Normal Univ., China
  • fYear
    2004
  • fDate
    6-10 Sept. 2004
  • Firstpage
    371
  • Abstract
    In this article, high-performance InP/InGaAs heterostructure confinement bipolar transistors, including a δ-doped heterojunction bipolar transistor (5-HBT) and superlattice-confinement bipolar transistor (SCBT), are successfully fabricated and demonstrated.
  • Keywords
    III-V semiconductors; MOCVD; heterojunction bipolar transistors; indium compounds; InGaAs; InP; heterojunction bipolar transistor; heterostructure confinement bipolar transistors; low-pressure MOCVD; superlattice-confinement bipolar transistor; Bipolar transistors; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Low voltage; MOCVD; Physics; Substrates; Superlattices; mHEMTs;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Vacuum Electron Sources Conference, 2004. Proceedings. IVESC 2004. The 5th International
  • Print_ISBN
    0-7803-8437-7
  • Type

    conf

  • DOI
    10.1109/IVESC.2004.1414279
  • Filename
    1414279
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=430827