DocumentCode :
430827
Title :
Investigation of InP/InGaAs heterostructure confinement bipolar transistors grown by low-pressure MOCVD
Author :
Tsai, Jung-Hui ; Chu, Ying-Cheng ; Zhu, King-Poul ; Chiu, Shao-Yen
Author_Institution :
Dept. of Phys., National Kaohsiung Normal Univ., China
fYear :
2004
fDate :
6-10 Sept. 2004
Firstpage :
371
Abstract :
In this article, high-performance InP/InGaAs heterostructure confinement bipolar transistors, including a δ-doped heterojunction bipolar transistor (5-HBT) and superlattice-confinement bipolar transistor (SCBT), are successfully fabricated and demonstrated.
Keywords :
III-V semiconductors; MOCVD; heterojunction bipolar transistors; indium compounds; InGaAs; InP; heterojunction bipolar transistor; heterostructure confinement bipolar transistors; low-pressure MOCVD; superlattice-confinement bipolar transistor; Bipolar transistors; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Low voltage; MOCVD; Physics; Substrates; Superlattices; mHEMTs;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Vacuum Electron Sources Conference, 2004. Proceedings. IVESC 2004. The 5th International
Print_ISBN :
0-7803-8437-7
Type :
conf
DOI :
10.1109/IVESC.2004.1414279
Filename :
1414279
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=430827
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