An interference on SiGe 5 GHZ VCOs integrated with inductors using low-K BCB dielectric

Author

Lee, Jonathan Y. ; Kim, Il Han ; Lee, Y.H. ; Chun, K.

Author_Institution

Sch. of Electr. Eng. & Comput. Sci., Seoul Nat. Univ., South Korea

Volume

A

fYear

2004

fDate

21-24 Nov. 2004

Firstpage

151

Abstract

In this paper, we integrated the MEMS inductor placed on BCB with SiGe 5 GHz VCO and investigated the interference on VCO performance by varying the height of BCB and the position of MEMS inductor on a core VCO circuit The performance of 5 GHz VCOs fabricated by IBM SiGe process with SiGe inductor and MEMS inductor was compared. The phase noise of VCO with MEMS inductor was lower than that of VCO with SiGe by 5 dBc at 100 kHz offset and the output power was higher by 6 dBm. The VCO with inductor placed on BCB with more height and the VCO with inductor that is not positioned above active area showed better characteristics.

Keywords

germanium; micromechanical devices; monolithic integrated circuits; power inductors; silicon; voltage-controlled oscillators; 100 kHz; MEMS; SiGe; VCO; inductors; interference; microelectromechanical system; voltage-controlled oscillators; Active inductors; Circuits; Dielectrics; Germanium silicon alloys; Interference; Micromechanical devices; Phase noise; Power generation; Silicon germanium; Voltage-controlled oscillators;

fLanguage

English

Publisher

ieee

Conference_Titel

TENCON 2004. 2004 IEEE Region 10 Conference

Print_ISBN

0-7803-8560-8

Type

conf

DOI

10.1109/TENCON.2004.1414379

Filename

1414379