Title :
Electroluminescence and infrared gain in strained GaSb quantum dots in silicon
Author :
Fukatsu, S. ; Jo, M. ; Yasuhara, N. ; Sugawara, Y. ; Kawamoto, K.
Author_Institution :
Graduate Sch. of Arts & Sci., Tokyo Univ., Japan
fDate :
29 Sept.-1 Oct. 2004
Abstract :
Compound semiconductor quantum dots (QDs) buried in Si have been developed as a new class of band-gap engineered Si-based QDs. It is demonstrated that the excellent optical properties of GaSb/Si QDs allow gain in the near-infrared.
Keywords :
III-V semiconductors; electroluminescence; energy gap; gallium compounds; infrared spectra; semiconductor quantum dots; GaSb quantum dots; GaSb-Si; Si; Si-based QD; band-gap engineering; compound semiconductor quantum dots; electroluminescence; infrared gain; strained quantum dots; Electroluminescence; Electrons; Light emitting diodes; Optical pumping; Photonic band gap; Quantum dots; Silicon; Stimulated emission; Temperature; US Department of Transportation;
Conference_Titel :
Group IV Photonics, 2004. First IEEE International Conference on
Print_ISBN :
0-7803-8474-1
DOI :
10.1109/GROUP4.2004.1416652
