Title :
Electrical and optical properties of silicon quantum dots light-emitting diode by using highly doped ZnO
Author :
Kim, Baek-Hyun ; Hwang, Dae-Kue ; Cho, Chang-Hee ; Park, Nae-Man ; Sung, Gun Yong ; Park, Seong-Ju
Author_Institution :
Dept. of Mater. Sci. & Eng., Gwangju Inst. of Sci. & Technol., South Korea
fDate :
29 Sept.-1 Oct. 2004
Abstract :
A light emitting diode (LED) with transparent doping layer (TDL) is fabricated. The I-V characteristics and the electroluminescence intensity of a LED with TDL significantly increase more than that of a LED without TDL. The improvement of optical and electrical properties is attributed to the excellent carrier injection through the n-ZnO layer into Si quantum dots embedded in silicon nitride film and the reduction of the electrical contact resistance with n-ZnO layer between metal and silicon nitride film.
Keywords :
MIS devices; contact resistance; electroluminescence; elemental semiconductors; gold; light emitting diodes; metallic thin films; nickel compounds; semiconductor doping; semiconductor quantum dots; silicon; silicon compounds; wide band gap semiconductors; zinc compounds; I-V characteristics; NiO-SiN-Si-Au; NiO-ZnO-SiN-Si-Au; Si; Si quantum dots; carrier injection; electrical contact resistance; electrical properties; electroluminescence intensity; highly doped ZnO; light-emitting diode; metal film; metal-insulator-semiconductor device; optical properties; silicon nitride film; silicon quantum dots; transparent doping layer; Contacts; Doping; Electroluminescence; Light emitting diodes; Optical films; Quantum dots; Semiconductor films; Silicon; Stimulated emission; Zinc oxide;
Conference_Titel :
Group IV Photonics, 2004. First IEEE International Conference on
Print_ISBN :
0-7803-8474-1
DOI :
10.1109/GROUP4.2004.1416660
