Title :
A silicon light emitting devices in standard CMOS technology
Author :
Chen, HongDa ; Sun, Zenghui ; Liu, Haijun ; Gao, Peng
Author_Institution :
Inst. of Semicond., Chinese Acad. of Sci., Beijing, China
fDate :
29 Sept.-1 Oct. 2004
Abstract :
A silicon light emitting device is designed and simulated. It is fabricated in 0.6 μm standard CMOS technology. The device can give more than 1 μW optical power of visible light under reverse breakdown. The device can be turned on at a bias of 0.88 V and work in a large range of voltage: 1.0-6.0 V. The external electrical-optical conversion efficiency is more than 10-6. The optical spectrum of the device is between 540-650 nm, which have a clear peak near 580 nm. The emission mechanism can be explained by a hot carrier direct recombination model.
Keywords :
CMOS integrated circuits; electro-optical effects; electron-hole recombination; elemental semiconductors; hot carriers; light emitting diodes; semiconductor device models; silicon; visible spectra; 1.0 to 6.0 V; 540 to 650 nm; Si; emission mechanism; external electrical-optical conversion efficiency; hot carrier direct recombination model; optical spectrum; reverse breakdown operation; silicon light emitting devices; standard CMOS technology; Breakdown voltage; CMOS technology; Electric breakdown; Light emitting diodes; Optical devices; Optical interconnections; Power generation; Power measurement; Silicon; Stimulated emission;
Conference_Titel :
Group IV Photonics, 2004. First IEEE International Conference on
Print_ISBN :
0-7803-8474-1
DOI :
10.1109/GROUP4.2004.1416662
