DocumentCode :
432041
Title :
Photoluminescence polarization decay under longitudinal electric field in strained Si1-xGex/Si quantum wells
Author :
Yasuhara, N. ; Fukatsu, S.
Author_Institution :
Graduate Sch. of Arts & Sci., Tokyo Univ., Japan
fYear :
2004
fDate :
29 Sept.-1 Oct. 2004
Firstpage :
118
Lastpage :
120
Abstract :
Non-linear decay of photoluminescence polarization was observed in strained Si1-xGex/Si quantum wells under longitudinal electric field at low temperature, which is interpreted in terms of delayed field ionization of excitons.
Keywords :
excitons; field ionisation; internal stresses; optical materials; photoluminescence; semiconductor quantum wells; silicon compounds; Si1-xGex-Si; exciton delayed field ionization; photoluminescence polarization decay; strained Si1-xGex/Si quantum wells; Art; Delay; Electrodes; Electroluminescent devices; Excitons; Ionization; Luminescence; Optical polarization; Photoluminescence; Temperature dependence;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Group IV Photonics, 2004. First IEEE International Conference on
Print_ISBN :
0-7803-8474-1
Type :
conf
DOI :
10.1109/GROUP4.2004.1416686
Filename :
1416686
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=432041
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