DocumentCode :
432565
Title :
Non-linear electro thermal model of LDMOS power transistor coupled to 3D thermal model in a circuit simulator
Author :
Guyonnet, M. ; Sommet, Raphael ; Quere, R. ; Bouisse, G.
Volume :
2
fYear :
2004
fDate :
12-14 Oct. 2004
Firstpage :
573
Lastpage :
576
Abstract :
In this article, we introdnee a new approach for Electro Thermal modeling of power LDMOS transistor. The electrical description of each intrinsic component is done with 3D Bi-Cubic Splines. The electrical model is coupled to a 3D thermal model stemming from FEA simulation. This full 3D Electro Thermal model is used with the ADS circuit simulator.
Keywords :
Capacitance; Circuit simulation; Coupling circuits; Electric resistance; Power transistors; Pulse measurements; Radio frequency; Radiofrequency amplifiers; Temperature dependence; Thermal resistance;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Conference, 2004. 34th European
Conference_Location :
Amsterdam, The Netherlands
Print_ISBN :
1-58053-992-0
Type :
conf
Filename :
1418881
Link To Document :
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