Title :
RF power performance of GaAs MOSFETs with Al/sub 2/O/sub 3/ gate dielectric grown by atomic layer deposition
Author :
Ye, Peide D. ; yang, Bo ; Ng, Kang Kee ; Bude, J. ; Wilk, G.D. ; Halder, Sebastian ; Marbell, M. ; Hierl, T. ; Hwang, James C. M.
Author_Institution :
Agere Systems, 555 Union Blvd., Allentown, PA 18109 USA
Abstract :
We demonstrated GaAs-based MOSFETS with excellent performance using an Al2O3 gate dielectric, deposited by atomic layer deposition (ALD). In this paper, we report for the first time the RF power performance of ALD Al2O3 GaAs MOSFETs. It shows the linear power gain ˜ 20 dB, the saturated output power ˜ 12 dBm or 70 mW/mm, and the maximum power-added efficiency (PAE) over 40% for GaAs MOSFETs.
Keywords :
Annealing; Atomic layer deposition; Dielectric substrates; Dielectrics and electrical insulation; Gallium arsenide; MOSFETs; Manufacturing processes; Radio frequency; Robustness; Temperature;
Conference_Titel :
Microwave Conference, 2004. 34th European
Conference_Location :
Amsterdam, The Netherlands
Print_ISBN :
1-58053-992-0
