DocumentCode
432647
Title
An improved follower stage for the design of 40Gb/s wideband MMIC pHEMT modulator driver amplifiers
Author
Courcelle, L. ; Kerherve, Eric ; Jarry, P.
Author_Institution
IXL Microelectronics Laboratory, CNRS UMR 58 18, ENSEIRB, University of Bordeaux, 351, cours de la Liberation 33405 Talence, France
Volume
2
fYear
2004
fDate
12-14 Oct. 2004
Firstpage
905
Lastpage
908
Abstract
Within the use of GaAs pHEMT technology, the bandwidth performances of Cherry- Hooper driver amplifiers need to be improved. To fulfill these requirements, we propose an original driver circuit topology dedicated to 40 Gb/s optical communication systems. To validate this new architecture, an MMIC amplifier has been designed using the 0.2 μm GaAs E/D mode pHEMT process provided by the OMMIC foundry. The driver circuit achieves 10 dB of transducer gain from 100 kHz to 45 GHz and provides around 2 Vpp on 50 Ω load. Input return loss is less than -5 dB over the hand.
Keywords
Bandwidth; Broadband amplifiers; Driver circuits; Gallium arsenide; Impedance; MMICs; Optical amplifiers; PHEMTs; Transducers; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 2004. 34th European
Conference_Location
Amsterdam, The Netherlands
Print_ISBN
1-58053-992-0
Type
conf
Filename
1418974
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