Title :
A stable two-port resonance phase transistor amplifier
Author :
Wanner, R. ; Russer, P.
Author_Institution :
Technische Universitat Munchen, Lehrstubl fur Hochfrequenztechnik Arcisstrasse 21, 80333 Munchen, Germany
Abstract :
In this paper we present a stable amplifier topology for resonance phase transistors (RPT). The RFT is an enhanced heterojunction bipolar transistor (HBT), having a positive gain far beyond its transit frequency fT. However, due to its resonant character, the RPT is a potentially instable device, and therefore does not allow to realize stable amplifiers in a straightforward design. The use of the cascode topology shows a considerable improvement of the stability and increases the maximum stable gain by 21 dB.
Keywords :
Bipolar transistors; Circuit stability; Cutoff frequency; Equivalent circuits; Heterojunction bipolar transistors; Impedance; Resonance; Resonant frequency; Semiconductor process modeling; Topology; Cascode Circuit; Resonance Phase Transistor; Stability; Transit Frequency;
Conference_Titel :
Microwave Conference, 2004. 34th European
Conference_Location :
Amsterdam, The Netherlands
Print_ISBN :
1-58053-992-0
