Title :
The influence of microwave two-port noise on residual phase noise in GaAs-HBTs
Author :
Rudolph, M. ; Heymann, P.
Author_Institution :
Ferdinand-Braun-Insttut fur Hochstfrequenztechnik (FBH), Gustav-Kirchhoff-Str.4, D-12489 Berlin, Germany
Abstract :
We present residual phase noise measurements of GaInP/GaAs HBTs, which are widely used as gain elements in microwave MMIC oscillators. These measurements allow to separate the influence of the noise sources on oscillator phase noise. It turns out that the microwave noise of the device near the oscillation frequency is an important source of phase noise for offset frequencies ⩾ 100kHz. Simulation results based on a transistor noise-model show good agreement with experimental results.
Keywords :
Additive noise; Circuit noise; Frequency; Gallium arsenide; Heterojunction bipolar transistors; MMICs; Microwave devices; Microwave oscillators; Microwave transistors; Phase noise;
Conference_Titel :
Microwave Conference, 2004. 34th European
Conference_Location :
Amsterdam, The Netherlands
Print_ISBN :
1-58053-992-0
