Title :
GaAsSb/InAlAs/InGaAs Tunnel Diodes for Millimeter Wave Detection in 220–330-GHz Band
Author :
Patrashin, Mikhail ; Sekine, Norihiko ; Kasamatsu, Akifumi ; Watanabe, Issei ; Hosako, Iwao ; Takahashi, Tsuyoshi ; Sato, Masaru ; Nakasha, Yasuhiro ; Hara, Naoki
Author_Institution :
Terahertz & Millemeter Waves ICT Lab., Nat. Inst. of Inf. & Commun. Technol., Koganei, Japan
Abstract :
We report on high-frequency performance and temperature stability of zero-bias GaAsSb/InAlAs/InGaAs tunnel diodes for millimeter-wave detection in 220-330-GHz band. The average voltage sensitivity of 1400 V/W has been achieved in 0.8 × 0.8μm2 mesa devices at room temperature. Measured current-voltage characteristics revealed a superior temperature stability of the devices compared with Schottky barrier diodes. The expected sensitivity variations over a temperature range from T=17-300 K are 1.7 dB.
Keywords :
aluminium compounds; gallium arsenide; indium compounds; millimetre wave detectors; millimetre wave diodes; sensitivity analysis; tunnel diodes; GaAsSb-InAlAs-InGaAs; Schottky barrier diodes; current-voltage characteristics; frequency 220 GHz to 330 GHz; mesa devices; millimeter wave detection; sensitivity variations; temperature 17 K to 300 K; temperature stability; tunnel diodes; Detectors; Indium compounds; Schottky diodes; Sensitivity; Temperature measurement; Temperature sensors; Backward diode; millimeter wave and terahertz detectors; semiconductor nanostructures; tunnel diode; tunneling; tunneling.;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2015.2393358
