GaAsSb/InAlAs/InGaAs Tunnel Diodes for Millimeter Wave Detection in 220–330-GHz Band

Author

Patrashin, Mikhail ; Sekine, Norihiko ; Kasamatsu, Akifumi ; Watanabe, Issei ; Hosako, Iwao ; Takahashi, Tsuyoshi ; Sato, Masaru ; Nakasha, Yasuhiro ; Hara, Naoki

Author_Institution

Terahertz & Millemeter Waves ICT Lab., Nat. Inst. of Inf. & Commun. Technol., Koganei, Japan

Volume

62

Issue

3

fYear

2015

fDate

Mar-15

Firstpage

1068

Lastpage

1071

Abstract

We report on high-frequency performance and temperature stability of zero-bias GaAsSb/InAlAs/InGaAs tunnel diodes for millimeter-wave detection in 220-330-GHz band. The average voltage sensitivity of 1400 V/W has been achieved in 0.8 × 0.8μm² mesa devices at room temperature. Measured current-voltage characteristics revealed a superior temperature stability of the devices compared with Schottky barrier diodes. The expected sensitivity variations over a temperature range from T=17-300 K are 1.7 dB.

Keywords

aluminium compounds; gallium arsenide; indium compounds; millimetre wave detectors; millimetre wave diodes; sensitivity analysis; tunnel diodes; GaAsSb-InAlAs-InGaAs; Schottky barrier diodes; current-voltage characteristics; frequency 220 GHz to 330 GHz; mesa devices; millimeter wave detection; sensitivity variations; temperature 17 K to 300 K; temperature stability; tunnel diodes; Detectors; Indium compounds; Schottky diodes; Sensitivity; Temperature measurement; Temperature sensors; Backward diode; millimeter wave and terahertz detectors; semiconductor nanostructures; tunnel diode; tunneling; tunneling.;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2015.2393358

Filename

7027787