DocumentCode
433264
Title
Multiple donor impurities of interstitial magnesium in silicon
Author
Ho, L.T.
Author_Institution
Inst. of Phys., Academia Sinica, Taipei, Taiwan
fYear
2004
fDate
27 Sept.-1 Oct. 2004
Firstpage
417
Lastpage
418
Abstract
It is well known that magnesium, when diffused into silicon, behaves as a double donor. Recently, we have further observed several additional spectral lines from high-resolution FTIR absorption spectrum, which clearly indicates the existence of more donor centers, all in the interstitial position, for magnesium in silicon.
Keywords
Fourier transform spectra; elemental semiconductors; impurity absorption spectra; impurity states; infrared spectra; interstitials; magnesium; silicon; Si:Mg; donor centers; double donor; high resolution FTIR absorption spectrum; interstitial magnesium; multiple donor impurities; silicon; spectral lines; Electromagnetic wave absorption; Impurities; Infrared spectra; Ionization; Magnesium; Physics; Silicon; Spectroscopy; Stationary state; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Infrared and Millimeter Waves, 2004 and 12th International Conference on Terahertz Electronics, 2004. Conference Digest of the 2004 Joint 29th International Conference on
Print_ISBN
0-7803-8490-3
Type
conf
DOI
10.1109/ICIMW.2004.1422139
Filename
1422139
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