DocumentCode
433350
Title
Reliability issues in advanced monolithic embedded high voltage CMOS technologies
Author
Tao, Guoqiao
Author_Institution
Philips Semicond., Nijmegen, Netherlands
fYear
2004
fDate
18-21 Oct. 2004
Firstpage
175
Lastpage
177
Abstract
"New" reliability issues can arise when integrating high-voltage CMOS onto an advanced CMOS technology platform. This papers discusses several issues, like the high-voltage gate oxide integrity, the transistor reliability and the low-k dielectrics in the back-end of the process, with the high voltage application kept in mind. Possible means of improvement are also discussed in this paper.
Keywords
CMOS integrated circuits; dielectric thin films; integrated circuit reliability; isolation technology; power integrated circuits; semiconductor device breakdown; semiconductor device reliability; CMOS technology reliability; STI edge gate oxide thinning; high-voltage CMOS; high-voltage gate oxide integrity; injection induced bipolar breakdown; low-k dielectrics; transistor reliability; trench-isolation technology; Breakdown voltage; CMOS technology; Degradation; Dielectrics; Hot carriers; Isolation technology; Medium voltage; Semiconductor device reliability; Testing; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Integrated Reliability Workshop Final Report, 2004 IEEE International
Print_ISBN
0-7803-8517-9
Type
conf
DOI
10.1109/IRWS.2004.1422768
Filename
1422768
Link To Document