Title :
Reliability issues in advanced monolithic embedded high voltage CMOS technologies
Author_Institution :
Philips Semicond., Nijmegen, Netherlands
Abstract :
"New" reliability issues can arise when integrating high-voltage CMOS onto an advanced CMOS technology platform. This papers discusses several issues, like the high-voltage gate oxide integrity, the transistor reliability and the low-k dielectrics in the back-end of the process, with the high voltage application kept in mind. Possible means of improvement are also discussed in this paper.
Keywords :
CMOS integrated circuits; dielectric thin films; integrated circuit reliability; isolation technology; power integrated circuits; semiconductor device breakdown; semiconductor device reliability; CMOS technology reliability; STI edge gate oxide thinning; high-voltage CMOS; high-voltage gate oxide integrity; injection induced bipolar breakdown; low-k dielectrics; transistor reliability; trench-isolation technology; Breakdown voltage; CMOS technology; Degradation; Dielectrics; Hot carriers; Isolation technology; Medium voltage; Semiconductor device reliability; Testing; Transistors;
Conference_Titel :
Integrated Reliability Workshop Final Report, 2004 IEEE International
Print_ISBN :
0-7803-8517-9
DOI :
10.1109/IRWS.2004.1422768
