DocumentCode
43362
Title
Material Dependence of Metal Grating on SOI Photodiode for Enhanced Quantum Efficiency
Author
Satoh, H. ; Kawakubo, Ken ; Ono, Atsushi ; Inokawa, Hiroshi
Author_Institution
Research Institute of Electronics, Shizuoka University, Hamamatsu, Japan
Volume
25
Issue
12
fYear
2013
fDate
15-Jun-13
Firstpage
1133
Lastpage
1136
Abstract
Material dependence of line-and-space metal grating among gold, silver, and aluminum, is experimentally investigated for a 100-nm-thick silicon-on-insulator p-n junction photodiode in terms of enhanced light sensitivity. It is found that light sensitivity in the visible long-wavelength region is enhanced with any grating material, and the peak wavelengths, which are determined by the grating period, are not much affected by the material. The relationship between the peak wavelength and the grating period is explained theoretically. The results indicate that the grating material can be selected from these materials by taking into account the short-wavelength sensitivity and compatibility with applications.
Keywords
Metal grating; p-n junction; photodide; silicon on insulator technology;
fLanguage
English
Journal_Title
Photonics Technology Letters, IEEE
Publisher
ieee
ISSN
1041-1135
Type
jour
DOI
10.1109/LPT.2013.2260138
Filename
6512003
Link To Document