• DocumentCode
    43362
  • Title

    Material Dependence of Metal Grating on SOI Photodiode for Enhanced Quantum Efficiency

  • Author

    Satoh, H. ; Kawakubo, Ken ; Ono, Atsushi ; Inokawa, Hiroshi

  • Author_Institution
    Research Institute of Electronics, Shizuoka University, Hamamatsu, Japan
  • Volume
    25
  • Issue
    12
  • fYear
    2013
  • fDate
    15-Jun-13
  • Firstpage
    1133
  • Lastpage
    1136
  • Abstract
    Material dependence of line-and-space metal grating among gold, silver, and aluminum, is experimentally investigated for a 100-nm-thick silicon-on-insulator p-n junction photodiode in terms of enhanced light sensitivity. It is found that light sensitivity in the visible long-wavelength region is enhanced with any grating material, and the peak wavelengths, which are determined by the grating period, are not much affected by the material. The relationship between the peak wavelength and the grating period is explained theoretically. The results indicate that the grating material can be selected from these materials by taking into account the short-wavelength sensitivity and compatibility with applications.
  • Keywords
    Metal grating; p-n junction; photodide; silicon on insulator technology;
  • fLanguage
    English
  • Journal_Title
    Photonics Technology Letters, IEEE
  • Publisher
    ieee
  • ISSN
    1041-1135
  • Type

    jour

  • DOI
    10.1109/LPT.2013.2260138
  • Filename
    6512003