Research of plasma CF/sub 2/Cl/sub 2//O/sub 2/ through the sensor of a emission spectral type [silicon plasma etching]

Author

Bogomolov, B.K.

Author_Institution

Novosibirsk State Tech. Univ., Russia

fYear

2004

fDate

21-24 Sept. 2004

Firstpage

24

Lastpage

30

Abstract

In this paper, research on the plasma chemical etching of silicon using the "Plasma - 600" equipment is carried out. The dependency of the current of a spectral emission type sensor on the flow of oxygen is measured. The influence on this dependency by the absorption of light by the Teflon polymer covered reactor quartz walls, and the presence of silicon in the reactor, is established. Previously unknown effects are discovered.

Keywords

elemental semiconductors; flow measurement; light absorption; oxygen; polymers; quartz; silicon; sputter etching; O/sub 2/; Si; SiO/sub 2/; Teflon polymer covered reactor quartz walls; carbon difluoride dichloride; light absorption; oxygen flow measurement; plasma chemical etching; silicon plasma etching; spectral emission type sensor; Absorption; Chemical sensors; Current measurement; Etching; Fluid flow measurement; Inductors; Plasma applications; Plasma chemistry; Plasma measurements; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronic Instrument Engineering Proceedings, 2004. APEIE 2004. 2004 7th International Conference on Actual Problems of

Conference_Location

Novosibirsk, Russia

Print_ISBN

0-7803-8476-8

Type

conf

Filename

1427176