Abstract :
In this paper, based on the investigation of the Shubnikov-de Haas and cyclotron resonance effects in two-dimensional (2D) semiconductor systems such as GaAs / Al/sub x/ Ga/sub 1-x/ As, by relative contactless measuring of the derivative reflection coefficient microwave radiation the carrier concentration, mobility, relaxation time and Hall-resistance in the 2D layers GaAs to be determined an accuracy of 0,5%. The contactless method of the determination of the coefficient filling and the plateau boundary in the quantum Hall effect is proposed
