DocumentCode :
434084
Title :
Finite-element model of the tensoresistor
Author :
Kolchuzhin, V.A.
fYear :
2004
fDate :
21-24 Sept. 2004
Firstpage :
214
Lastpage :
214
Abstract :
Classifications of integrated tensoresistor models are presented, These models are including: anisotropy of conductivity; influence of tensoresistor geometry and contact areas; non-Uniform distribution of mechanical stress and concentration of doping impurity on tensoresistor volume. The finite-elernent model integrated tensoresistor which allows taking into account in consecutive these effects is submitted. The received model can be used for calculation and optimization multiterminal strain-sensing element with complex layout.
Keywords :
Anisotropic magnetoresistance; Conductivity; Doping; Finite element methods; Geometry; Impurities; Interference; Semiconductor process modeling; Solid modeling; Stress;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronic Instrument Engineering Proceedings, 2004. APEIE 2004. 2004 7th International Conference on Actual Problems of
Conference_Location :
Novosibirsk, Russia
Print_ISBN :
0-7803-8476-8
Type :
conf
Filename :
1427222
Link To Document :
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