Title :
Influence of Package Trace Properties on CDM Stress
Author :
Di Sarro, James P. ; Reynolds, Bill ; Gauthier, R.
Author_Institution :
Semicond. R&D Center (SRDC), IBM, Essex Junction, VT, USA
Abstract :
CDM current waveform properties show a strong dependence on pin type and location due to package transmission line effects in large BGAs. I/O pin waveforms have a depressed peak, slower rise time, and increased pulsewidth compared to power supply waveforms, with the offset increasing with the distance from the package center. Simulations illustrate that the internal current through the ESD protection network on the die can deviate significantly from the external current observed in the CDM system for long package traces.
Keywords :
ball grid arrays; electrostatic discharge; BGA; CDM current waveform properties; CDM stress; ESD protection network; I-O pin waveforms; depressed peak; internal current; long-package traces; package center; package trace properties; package transmission line effects; pin type; power supply waveforms; pulsewidth; rise time; Capacitance; Current measurement; Electrostatic discharges; Integrated circuit modeling; Pins; Power transmission lines; Transmission line measurements; CMOS integrated circuits (ICs); charged device model (CDM); electrostatic discharge (ESD);
Journal_Title :
Device and Materials Reliability, IEEE Transactions on
DOI :
10.1109/TDMR.2014.2329552
