Influence of Package Trace Properties on CDM Stress

Author

Di Sarro, James P. ; Reynolds, Bill ; Gauthier, R.

Author_Institution

Semicond. R&D Center (SRDC), IBM, Essex Junction, VT, USA

Volume

14

Issue

3

fYear

2014

fDate

Sept. 2014

Firstpage

810

Lastpage

817

Abstract

CDM current waveform properties show a strong dependence on pin type and location due to package transmission line effects in large BGAs. I/O pin waveforms have a depressed peak, slower rise time, and increased pulsewidth compared to power supply waveforms, with the offset increasing with the distance from the package center. Simulations illustrate that the internal current through the ESD protection network on the die can deviate significantly from the external current observed in the CDM system for long package traces.

Keywords

ball grid arrays; electrostatic discharge; BGA; CDM current waveform properties; CDM stress; ESD protection network; I-O pin waveforms; depressed peak; internal current; long-package traces; package center; package trace properties; package transmission line effects; pin type; power supply waveforms; pulsewidth; rise time; Capacitance; Current measurement; Electrostatic discharges; Integrated circuit modeling; Pins; Power transmission lines; Transmission line measurements; CMOS integrated circuits (ICs); charged device model (CDM); electrostatic discharge (ESD);

fLanguage

English

Journal_Title

Device and Materials Reliability, IEEE Transactions on

Publisher

ieee

ISSN

1530-4388

Type

jour

DOI

10.1109/TDMR.2014.2329552

Filename

6827938