DocumentCode
434313
Title
Volt-amper characteristics parameters research of the power semiconductor devices in the conditions of low conducting ability.
Author
Bespalov, N.N. ; Trofimov, N.V.
fYear
2004
fDate
21-24 Sept. 2004
Firstpage
268
Lastpage
268
Abstract
The models of static and dynamic volt-amper semiconductor devices in the conditions of low conducting ability with different values of operating temperature have been elaborated. The evaluation of the approximate error of the power semiconductor devices and the demands to their measuring modes have also adduced.
Keywords
Power generation; Power measurement; Power semiconductor devices; Power system modeling; Pulse width modulation; Pulse width modulation converters; Semiconductor device measurement; Semiconductor devices; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronic Instrument Engineering Proceedings, 2004. APEIE 2004. 2004 7th International Conference on Actual Problems of
Conference_Location
Novosibirsk, Russia
Print_ISBN
0-7803-8476-8
Type
conf
Filename
1427478
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