Linear approximate methods of a far-end crosstalk simulation for a variable capacitance load

Author

Noguchi, Yasuaki ; Miyao, Nobuyuki ; Matsumoto, Fujihiko

Author_Institution

Dept. of Appl. Phys., National Defense Acad., Yokosuka, Japan

Volume

1

fYear

2003

fDate

11-16 May 2003

Firstpage

316

Abstract

The semiconductor has a characteristic of nonlinear impedance that is varied by input voltage, frequency and temperature. The nonlinear characteristic complicates to solve the crosstalk problems. Then, from the static C-t characteristic of the diode, the nonlinear capacitance approximates a linear equation and the equation is substitute into the crosstalk equations. We solve the crosstalk equations with the approximate values, and compare the measurement values with the simulated values. As a result, we found that the optimum solution is obtained by using the linear approximate equation.

Keywords

approximation theory; capacitance; crosstalk; impedance matching; microstrip lines; modelling; C-t characteristic; Laplace transformation; capacitance load; crosstalk equations; far-end crosstalk simulation; linear approximate methods; linear equation; microstrip lines; nonlinear capacitance; nonlinear impedance; variable capacitor diode; Capacitance; Capacitors; Computational modeling; Crosstalk; Finite difference methods; Impedance; Linear approximation; Nonlinear equations; Semiconductor diodes; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electromagnetic Compatibility, 2003. EMC '03. 2003 IEEE International Symposium on

Print_ISBN

0-7803-7779-6

Type

conf

DOI

10.1109/ICSMC2.2003.1428254

Filename

1428254