• DocumentCode
    43466
  • Title

    Phase Transformation of Monocrystalline Silicon Induced by Polishing With Diamond Abrasives

  • Author

    Yang Li ; Jing Lu ; Xipeng Xu

  • Author_Institution
    MOE Eng. Res. Center for Brittle Mater. Machining, Huaqiao Univ., Xiamen, China
  • Volume
    28
  • Issue
    2
  • fYear
    2015
  • fDate
    May-15
  • Firstpage
    153
  • Lastpage
    159
  • Abstract
    A newly developed semi-fixed flexible polishing tool called sol-gel (SG) polishing pads can satisfy the polishing demand of silicon wafers with scratch-free and nano-roughness surface. However, an obvious damage layer emerges on the surface of monocrystalline silicon wafer after polished by SG polishing pads with diamond abrasives. In this paper, combined characterizations consist of grazing incidence X-ray diffraction, Raman spectroscopy (RS), focused ion beam-scanning electron microscopy (FIB-SEM), transmission electron microscopy (TEM), and SEM were used to observe the damage layer together with the polishing residue. The results indicated that the surface monocrystalline silicon transformed to α-Si and nano-Si. Analysis on the polishing processes under the same experimental parameters with different tools and abrasives revealed that the material removing scale about 100-300 nm may account for the generation of damage layer.
  • Keywords
    Raman spectra; X-ray diffraction; abrasives; diamond; elemental semiconductors; focused ion beam technology; phase transformations; polishing; scanning electron microscopy; silicon; sol-gel processing; surface roughness; transmission electron microscopy; FIB-SEM; RS; Raman spectroscopy; SG polishing pads; Si; TEM; diamond abrasives; focused ion beam-scanning electron microscopy; grazing incidence X-ray diffraction; monocrystalline silicon wafer; nano-roughness surface; phase transformation; polishing residue; scratch-free surface; semifixed flexible polishing tool; silicon wafers; sol-gel polishing pads; surface monocrystalline silicon; transmission electron microscopy; Abrasives; Diamonds; Laser beams; Scanning electron microscopy; Silicon; Surface treatment; SG polishing pads; Sol-gel (SG) polishing pads; damage layer; diamond abrasives; silicon wafer;
  • fLanguage
    English
  • Journal_Title
    Semiconductor Manufacturing, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0894-6507
  • Type

    jour

  • DOI
    10.1109/TSM.2015.2398511
  • Filename
    7027808