DocumentCode :
4350
Title :
Backend Dielectric Reliability Full Chip Simulator
Author :
Bashir, Muhammad M. ; Chang-Chih Chen ; Milor, Linda ; Dae Hyun Kim ; Sung Kyu Lim
Author_Institution :
Sch. of Electr. & Comput. Eng., Georgia Tech, Atlanta, GA, USA
Volume :
22
Issue :
8
fYear :
2014
fDate :
Aug. 2014
Firstpage :
1750
Lastpage :
1762
Abstract :
Backend dielectric breakdown degrades the reliability of circuits. A methodology to estimate chip lifetime because of backend dielectric breakdown is presented. It incorporates failures because of parallel tracks, the width effect, and field enhancement due to line ends. It also includes the operating temperature and activity.
Keywords :
electric breakdown; failure analysis; integrated circuit reliability; backend dielectric breakdown; backend dielectric reliability full chip simulator; chip lifetime; circuit reliability; failures; field enhancement; line ends; operating temperature; parallel tracks; width effect; Dielectric breakdown; Dielectrics; Feature extraction; Geometry; Layout; Reliability; Weibull distribution; Design for manufacture; dielectric breakdown; integrated circuit reliability; integrated circuit reliability.;
fLanguage :
English
Journal_Title :
Very Large Scale Integration (VLSI) Systems, IEEE Transactions on
Publisher :
ieee
ISSN :
1063-8210
Type :
jour
DOI :
10.1109/TVLSI.2013.2277856
Filename :
6595154
Link To Document :
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